High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
V botách mu byl hic, tak je propíchl nožem. Teď na nich vydělává miliardy - iDNES.cz
PDF) Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
PDF) Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
METAL-TEMPLATED CRYSTALLIZATION OF GERMANIUM FOR OPTOELECTRONIC APPLICATIONS A DISSERTATION SUBMITTED TO THE DEPARTMENT OF APPL
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract
